IPP062NE7N3 G

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IPP062NE7N3 G datasheet

• Маркировка
  IPP062NE7N3 G
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP062NE7N3 G Configuration: Single Continuous Drain Current: 80 A Drain-source Breakdown Voltage: 75 V Fall Time: 10 nS Gate Charge Qg: 42 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220-3 Part # Aliases: IPP062NE7N3GHKSA1 IPP062NE7N3GXKSA1 SP000819768 Power Dissipation: 136 W Resistance Drain-source Rds (on): 6.2 mOhms at 10 V Rise Time: 48 nS Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 24 nS RoHS: yes Drain-Source Breakdown Voltage: 75 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 6.2 mOhms at 10 V Typical Turn-Off Delay Time: 24 nS
• Количество страниц
  9 шт.
• Форматы файла
  HTML, PDF

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